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BS170PSM

更新时间: 2024-11-16 19:33:07
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
1页 62K
描述
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

BS170PSM 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:SMALL OUTLINE, R-PSSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.04
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.27 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BS170PSM 数据手册

  

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