Datasheet > BPW76_05

BPW76_05

更新时间： 2022-12-20 14:12:47

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
6页	177K
描述
Silicon NPN Phototransistor

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BPW76_05 数据手册

BPW76

Vishay Semiconductors

Silicon NPN Phototransistor

Description

BPW76 is a high sensitive silicon NPN epitaxial pla-

nar phototransistor in a standard TO-18 hermetically

sealed metal case.

Its flat glass window makes it ideal for applications

with external optics.

A base terminal is available to enable biasing and

sensitivity control.

94 8401

Features

• Hermetically sealed case

• Flat window

Applications

• Very wide viewing angle ϕ = 40 °

• Exact central chip alignment

• Long range light barrier with an additional optics

• Base terminal available

Detector in electronic control and drive circuits

• High photo sensitivity

• Suitable for visible and near infrared radiation

• Selected into sensitivity groups

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector current

V_CEO

V_EBO

I_C

°C

Collector peak current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

Soldering Temperature

t_p/T = 0.5, t_p≤ 10 ms

T_amb≤ 25 °C

I_CM

P_tot

T_j

100

250

125

T_stg

T_sd

- 55 to + 125

260

°C

t ≤ 5 s

°C

Thermal Resistance Junction/

Ambient

R_thJA

400

K/W

Thermal Resistance Junction/

Case

R_thJC

150

K/W

Document Number 81526

Rev. 1.3, 08-Mar-05

www.vishay.com

12 3 4 5 6

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