Datasheet > BPW82_08

BPW82_08

更新时间： 2022-12-20 14:12:49

品牌	Logo	应用领域
威世 - VISHAY		光电二极管光电二极管
页数	文件大小	规格书
5页	89K
描述
Silicon PIN Photodiode

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中文翻译

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数据手册

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BPW82_08 数据手册

BPW82

Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

FEATURES

• Package type: leaded

• Package form: side view

• Dimensions (L x W x H in mm): 5 x 4 x 6.8

• Radiant sensitive area (in mm²): 7.5

• High radiant sensitivity

• Daylight blocking filter matched with 870 nm to

950 nm emitters

94 8480

• Fast response times

• Angle of half sensitivity: ϕ = 65ꢀ

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• High speed detector for infrared radiation

DESCRIPTION

BPW82 is a PIN photodiode with high speed and high radiant

sensitivity in a black, side view plastic package with daylight

blocking filter. Filter bandwidth is matched with 870 nm to

950 nm IR emitters.

• Infrared remote control and free air data transmission

systems, e.g. in combination with TSFFxxxx series IR

emitters

PRODUCT SUMMARY

COMPONENT

I_ra(µA)

ϕ (deg)

λ_0.5(nm)

BPW82

790 to 1050

Note

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

BPW82

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

Side view

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

V_R

VALUE

UNIT

Reverse voltage

215

ꢀC

Power dissipation

T_amb≤ 25 ꢀC

P_V

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

- 40 to + 100

260

ꢀC

t ≤ 5 s

T_sd

ꢀC

Thermal resistance junction/ambient

Note

T_amb= 25 ꢀC, unless otherwise specified

Connected with Cu wire, 0.14 mm²

R_thJA

350

K/W

www.vishay.com

406

For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81529

Rev. 1.6, 08-Sep-08

12 3 4 5

中文翻译

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