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BPW85B PDF预览

BPW85B

更新时间: 2024-09-14 22:26:11
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
6页 89K
描述
Silicon NPN Phototransistor

BPW85B 数据手册

 浏览型号BPW85B的Datasheet PDF文件第2页浏览型号BPW85B的Datasheet PDF文件第3页浏览型号BPW85B的Datasheet PDF文件第4页浏览型号BPW85B的Datasheet PDF文件第5页浏览型号BPW85B的Datasheet PDF文件第6页 
BPW85  
Vishay Telefunken  
Silicon NPN Phototransistor  
Description  
BPW85 is a high speed and high sensitive silicon NPN  
epitaxial planar phototransistor in a standard T–1 (ø 3  
mm) plastic package. Due to its waterclear epoxy the  
device is sensitive to visible and near infrared radi-  
ation.  
The viewing angle of ± 25 makes it insensible to ambi-  
ent straylight.  
Features  
Fast response times  
High photo sensitivity  
94 8396  
Standard T–1 (ø 3 mm ) clear plastic package  
Axial terminals  
Angle of half sensitivity ϕ = ± 25  
Suitable for visible and near infrared radiation  
Selected into sensitivity groups  
Applications  
Detector in electronic control and drive circuits  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Test Conditions  
Symbol  
Value  
70  
5
50  
100  
Unit  
V
V
mA  
mA  
mW  
C
Collector Emitter Voltage  
Emitter Collector Voltage  
Collector Current  
Peak Collector Current  
Total Power Dissipation  
Junction Temperature  
V
V
CEO  
ECO  
I
C
t /T = 0.5, t  
10 ms  
I
p
p
CM  
T
amb  
55 C  
P
tot  
100  
100  
T
j
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
T
T
–55...+100  
260  
C
C
K/W  
stg  
t
3 s, 2 mm from case  
sd  
R
thJA  
450  
Document Number 81531  
Rev. 3, 16-Nov-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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