BPW77N

更新时间： 2024-02-15 05:32:40

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
6页	85K
描述
Silicon NPN Phototransistor

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技术参数
数据手册

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BPW77N 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.64	Is Samacsys：	N
其他特性：	HIGH SENSITIVITY	Coll-Emtr Bkdn Voltage-Min：	70 V
配置：	SINGLE	最大暗电源：	100 nA
红外线范围：	YES	标称光电流：	20 mA
功能数量：	1	光电设备类型：	PHOTO TRANSISTOR
峰值波长：	850 nm	形状：	ROUND
Base Number Matches：	1

BPW77N 数据手册

BPW77N

Vishay Telefunken

Silicon NPN Phototransistor

Description

BPW77N is a very high sensitive silicon NPN epitaxial

planar phototransistor in a standard TO–18 hermeti-

cally sealed metal case.

Its glass lens featuring a viewing angle of ±10 makes

it insensible to ambient straylight.

A base terminal is available to enable biasing and sen-

sitivity control.

Features

Hermetically sealed case

Lens window

94 8486

Narrow viewing angle ϕ = ± 10

Exact central chip alignment

Base terminal available

High photo sensitivity

Suitable for visible and near infrared radiation

Selected into sensitivity groups

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

amb

= 25 C

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Test Conditions

Symbol

Value

Unit

CBO

CEO

EBO

Collector Current

Peak Collector Current

Total Power Dissipation

Junction Temperature

100

250

125

t /T = 0.5, t

10 ms

25 C

amb

tot

Storage Temperature Range

Soldering Temperature

–55...+125

260

stg

5 s

Thermal Resistance Junction/Ambient

Thermal Resistance Junction/Case

thJA

thJC

400

150

K/W

Document Number 81527

Rev. 2, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

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