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BPW82

更新时间: 2024-02-27 01:14:21
品牌 Logo 应用领域
威世 - VISHAY 光电二极管光电二极管
页数 文件大小 规格书
5页 75K
描述
Silicon PIN Photodiode

BPW82 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.65
最大暗电源:30 nAJESD-609代码:e0
安装特点:THROUGH HOLE MOUNT最高工作温度:80 °C
最低工作温度:-30 °C光电设备类型:PIN PHOTODIODE
最长响应时间:5e-8 s最大反向电压:32 V
半导体材料:GaAs子类别:Photo Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BPW82 数据手册

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BPW82  
Vishay Telefunken  
Silicon PIN Photodiode  
Description  
BPW82 is a high speed and high sensitive PIN photo-  
diode in a flat side view plastic package. The epoxy  
package itself is an IR filter, spectrally matched to  
GaAs or GaAlAs IR emitters (  
800 nm).  
p
The large active area combined with a flat case gives  
a high sensitivity at a wide viewing angle.  
Features  
2
Large radiant sensitive area (A=7.5 mm )  
Wide angle of half sensitivity ϕ = ± 65  
High radiant sensitivity  
94 8480  
Fast response times  
Small junction capacitance  
Plastic case with IR filter  
Suitable for near infrared radiation  
Especially for GaAlAs emitters with =870nm  
p
Applications  
High speed photo detector  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Power Dissipation  
Junction Temperature  
Test Conditions  
25 C  
Symbol  
Value  
60  
215  
Unit  
V
mW  
C
V
P
R
T
amb  
V
T
100  
j
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
T
T
–55...+100  
260  
C
C
K/W  
stg  
t
5 s  
sd  
R
thJA  
350  
Document Number 81529  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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