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BPW78A

更新时间: 2024-01-22 15:34:00
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
5页 79K
描述
Silicon NPN Phototransistor

BPW78A 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.72
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
最大通态电流:0.1 A最高工作温度:100 °C
峰值波长:780 nm最大功率耗散:0.15 W
最长响应时间:0.0000034 s子类别:Photo Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BPW78A 数据手册

 浏览型号BPW78A的Datasheet PDF文件第2页浏览型号BPW78A的Datasheet PDF文件第3页浏览型号BPW78A的Datasheet PDF文件第4页浏览型号BPW78A的Datasheet PDF文件第5页 
BPW78  
Vishay Telefunken  
Silicon NPN Phototransistor  
Description  
BPW78 is a high sensitive silicon NPN epitaxial planar  
phototransistor in a flat side view plastic package.  
A small recessed lens provides a high sensitivity in a  
low profile case.  
The epoxy package itself is an IR filter, spectrally  
matched to GaAs or GaAs on GaAlAs IR emitters  
(
> 850nm).  
p
Features  
Plastic case with IR filter  
Suitable for near infrared radiation  
High radiant sensitivity  
94 8487  
Super flat sideview case with spherical lens  
Lens integrated  
Irradiation direction vertical to mounting direction  
Angle of half sensitivity ϕ = ± 25  
Selected into sensitivity groups  
Compatibel with CQX48  
Applications  
Detector in electronic control and drive circuits  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Test Conditions  
Symbol  
Value  
32  
5
100  
200  
Unit  
V
V
mA  
mA  
mW  
C
Collector Emitter Voltage  
Emitter Collector Voltage  
Collector Current  
Peak Collector Current  
Total Power Dissipation  
Junction Temperature  
V
V
CEO  
ECO  
I
C
t /T = 0.5, t  
10 ms  
I
p
p
CM  
T
amb  
40 C  
P
tot  
150  
100  
T
j
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
T
T
–55...+100  
260  
C
C
K/W  
stg  
t
5 s  
sd  
R
thJA  
400  
Document Number 81528  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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