Datasheet > BPW76A_08

BPW76A_08

更新时间： 2022-12-20 14:12:47

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
5页	149K
描述
Silicon NPN Phototransistor

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BPW76A_08 数据手册

BPW76A, BPW76B

Vishay Semiconductors

Silicon NPN Phototransistor, RoHS Compliant

FEATURES

• Package type: leaded

• Package form: TO-18

• Dimensions (in mm): Ø 4.7

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

94 8401

• Angle of half sensitivity: ϕ = 40ꢀ

• Base terminal connected

• Hermetically sealed package

• Flat glass window

DESCRIPTION

BPW76 is a silicon NPN phototransistor with high radiant

sensitivity in hermetically sealed TO-18 package with base

terminal and flat glass window. It is sensitive to visible and

near infrared radiation.

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Detector in electronic control and drive circuits

PRODUCT SUMMARY

COMPONENT

I_ca(mA)

0.4 to 0.8

> 0.6

ϕ (deg)

λ_0.1(nm)

BPW76A

450 to 1080

BPW76B

Note

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

PACKAGE FORM

TO-18

BPW76A

MOQ: 1000 pcs, 1000 pcs/bulk

BPW76B

Bulk

TO-18

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector base voltage

Collector emitter voltage

Emitter base voltage

Collector current

ꢀC

Collector peak current

t_p/T = 0.5, t_p≤ 10 ms

T_amb≤ 25 ꢀC

I_CM

P_V

100

Total power dissipation

Junction temperature

250

T_j

125

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

T_sd

- 40 to + 125

260

ꢀC

t ≤ 5 s

ꢀC

Thermal resistance junction/ambient

Thermal resistance junction/gase

Connected with Cu wire, 0.14 mm²

R_thJA

R_thJC

400

K/W

150

Note

T_amb= 25 ꢀC, unless otherwise specified

www.vishay.com

398

For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81526

Rev. 1.4, 08-Sep-08

12 3 4 5

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