Datasheet > BLM6G10-30,135

BLM6G10-30,135

更新时间： 2024-11-16 20:07:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	1369K
描述
BLM6G10-30

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技术参数
数据手册

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BLM6G10-30,135 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	PLASTIC, SOT834-1, HSOP-16	针数：	16
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

BLM6G10-30,135 数据手册

BLM6G10-30; BLM6G10-30G

W-CDMA 860 MHz - 960 MHz power MMIC

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from

860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead

(SOT834-1).

Table 1.

Application information

Typical RF performance at T_h= 25 C.

Mode of operation

V_DS

(V)

P_L(AV)

(W)

G_p

_D

IMD3

(dBc)

48.5^[1]52^[1]

ACPR

(dBc)

(MHz)

(dB)

(%)

11.5

2-carrier W-CDMA

f₁= 935; f₂= 945

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 10 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical 2-carrier W-CDMA performance at a frequency of 940 MHz:

 Average output power = 2 W

 Gain = 29 dB (typ)

 Efficiency = 11.5 %

 IMD3 = 48.5 dBc

 ACPR = 52 dBc

 Integrated temperature compensated bias

 Excellent thermal stability

 Biasing of individual stages is externally accessible

 Integrated ESD protection

 Small component size, very suitable for PA size reduction

 On-chip matching (input matched to 50 , output partially matched)

 High power gain

 Designed for broadband operation (860 MHz to 960 MHz)

12 3 4 5 6 7...15

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