Datasheet > BLM7G1822S-40ABGY

BLM7G1822S-40ABGY

更新时间： 2024-11-16 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
20页	1888K
描述
RF FET LDMOS 65V 31.5DB SOT12122

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BLM7G1822S-20PB;

BLM7G1822S-20PBG

LDMOS 2-stage power MMIC

Rev. 6 — 28 September 2018

Product data sheet

1. Product profile

1.1 General description

The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state

of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general

purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz.

Available in gull wing or straight lead outline.

Table 1.

Performance

Typical RF performance at T_case= 25 °C; I_Dq1= 27 mA; I_Dq2= 76 mA.

Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section

unless otherwise specified in a class-AB production circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR_5M

(dBc)

41

(MHz)

2167.5

(dB)

32.3

(%)

single carrier W-CDMA

1.2 Features and benefits

 Designed for broadband operation (frequency 1805 MHz to 2170 MHz)

 High section-to-section isolation enabling multiple combinations

 Integrated temperature compensated bias

 Biasing of individual stages is externally accessible

 Integrated ESD protection

 Excellent thermal stability

 High power gain

 On-chip matching for ease of use

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are

the following as also depicted in Section 8.1:

 Dual section or single ended

 Doherty

 Quadrature combined

 Push-pull

12 3 4 5 6 7...20

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