BLM6G22-30G

更新时间： 2024-09-30 06:42:43

品牌	Logo	应用领域
恩智浦 - NXP		晶体射频场效应晶体管局域网
页数	文件大小	规格书
12页	96K
描述
W-CDMA 2100 MHz to 2200 MHz power MMIC

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中文翻译

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技术参数
数据手册

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BLM6G22-30G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
包装说明：	ROHS COMPLIANT, PLASTIC, SOT822-1, SOP-16	针数：	16
Reach Compliance Code：	not_compliant	HTS代码：	8542.39.00.01
风险等级：	5.73	JESD-609代码：	e3
湿度敏感等级：	3	端子面层：	Tin (Sn)
Base Number Matches：	1

BLM6G22-30G 数据手册

BLM6G22-30; BLM6G22-30G

W-CDMA 2100 MHz to 2200 MHz power MMIC

Rev. 03 — 21 November 2008

Preliminary data sheet

1. Product proﬁle

1.1 General description

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from

2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or ﬂat lead

(SOT834-1).

Table 1.

Typical performance

Typical RF performance at T_h= 25 °C.

Mode of operation

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

(%)

IMD3

(dBc)

−48^[1]

ACPR

(dBc)

−50^[1]

(MHz)

(dB)

29.5

2-carrier W-CDMA

2110 to 2170

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 10 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:

N Average output power = 2 W

N Power gain = 30 dB (typ)

N Efﬁciency = 9 %

N IMD3 = −48 dBc

N ACPR = −50 dBc

I Integrated temperature compensated bias

I Excellent thermal stability

I Biasing of individual stages is externally accessible

I Integrated ESD protection

I Small component size, very suitable for PA size reduction

I On-chip matching (input matched to 50 Ohm, output partially matched)

I High power gain

I Designed for broadband operation (2100 MHz to 2200 MHz)

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...12

中文翻译

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