型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLM7G1822S-80PBGY | ETC |
获取价格 |
RF FET LDMOS 65V 28DB SOT12122 |
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BLM7G1822S-80PBY | ETC |
获取价格 |
RF FET LDMOS 65V 28DB SOT12122 |
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BLM7G22S-60PB | NXP |
获取价格 |
RF Manual 16th edition |
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BLM7G22S-60PB(G) | NXP |
获取价格 |
RF Manual 16th edition |
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BLM7G22S-60PBG | NXP |
获取价格 |
RF Manual 16th edition |
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BLM7G22S-60PBGY | ETC |
获取价格 |
RF FET LDMOS 65V 31.5DB SOT12121 |
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BLM7G22S-60PBY | ETC |
获取价格 |
RF FET LDMOS 65V 31.5DB SOT12121 |
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BLM7G24S-30BGY | ETC |
获取价格 |
RF FET LDMOS 65V 31.5DB SOT12121 |
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BLM80P04 | BELLING |
获取价格 |
BLM80P04 uses advanced trench technology and design to provide excellent RDS(ON) with low |
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BLM80P10 | BELLING |
获取价格 |
The BLM80P10 uses advanced trench technology to provide excellent RDS(ON), low gate charge |
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