Datasheet > BLM6G22-30G,118

BLM6G22-30G,118

更新时间： 2024-11-16 14:48:07

品牌	Logo	应用领域
恩智浦 - NXP		局域网
页数	文件大小	规格书
14页	140K
描述
BLM6G22-30G

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技术参数
数据手册

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BLM6G22-30G,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
包装说明：	ROHS COMPLIANT, PLASTIC, SOT822-1, SOP-16	针数：	16
Reach Compliance Code：	not_compliant	风险等级：	5.7
Base Number Matches：	1

BLM6G22-30G,118 数据手册

BLM6G22-30; BLM6G22-30G

W-CDMA 2100 MHz to 2200 MHz power MMIC

Rev. 4 — 7 March 2011

Product data sheet

1. Product profile

1.1 General description

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from

2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead

(SOT834-1).

Table 1.

Typical performance

Typical RF performance at T_h= 25 °C.

Mode of operation

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

(%)

IMD3

(dBc)

−48^[1]

ACPR

(dBc)

−50^[1]

(MHz)

(dB)

29.5

2-carrier W-CDMA

2110 to 2170

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 10 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:

Average output power = 2 W

Power gain = 30 dB (typ)

Efficiency = 9 %

IMD3 = −48 dBc

ACPR = −50 dBc

Integrated temperature compensated bias

Excellent thermal stability

Biasing of individual stages is externally accessible

Integrated ESD protection

Small component size, very suitable for PA size reduction

On-chip matching (input matched to 50 Ohm, output partially matched)

High power gain

Designed for broadband operation (2100 MHz to 2200 MHz)

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...14

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