5秒后页面跳转
BLM7G1822S-20PBGY PDF预览

BLM7G1822S-20PBGY

更新时间: 2024-02-05 11:54:05
品牌 Logo 应用领域
其他 - ETC 局域网
页数 文件大小 规格书
20页 1888K
描述
RF FET LDMOS 65V 32.3DB SOT12121

BLM7G1822S-20PBGY 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:5.25
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BLM7G1822S-20PBGY 数据手册

 浏览型号BLM7G1822S-20PBGY的Datasheet PDF文件第2页浏览型号BLM7G1822S-20PBGY的Datasheet PDF文件第3页浏览型号BLM7G1822S-20PBGY的Datasheet PDF文件第4页浏览型号BLM7G1822S-20PBGY的Datasheet PDF文件第5页浏览型号BLM7G1822S-20PBGY的Datasheet PDF文件第6页浏览型号BLM7G1822S-20PBGY的Datasheet PDF文件第7页 
BLM7G1822S-20PB;  
BLM7G1822S-20PBG  
LDMOS 2-stage power MMIC  
Rev. 6 — 28 September 2018  
Product data sheet  
1. Product profile  
1.1 General description  
The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state  
of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general  
purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz.  
Available in gull wing or straight lead outline.  
Table 1.  
Performance  
Typical RF performance at Tcase = 25 °C; IDq1 = 27 mA; IDq2 = 76 mA.  
Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section  
unless otherwise specified in a class-AB production circuit.  
Test signal  
f
VDS  
(V)  
28  
PL(AV)  
(W)  
2
Gp  
ηD  
ACPR5M  
(dBc)  
41  
(MHz)  
2167.5  
(dB)  
32.3  
(%)  
23  
single carrier W-CDMA  
1.2 Features and benefits  
Designed for broadband operation (frequency 1805 MHz to 2170 MHz)  
High section-to-section isolation enabling multiple combinations  
Integrated temperature compensated bias  
Biasing of individual stages is externally accessible  
Integrated ESD protection  
Excellent thermal stability  
High power gain  
On-chip matching for ease of use  
For RoHS compliance see the product details on the Ampleon website  
1.3 Applications  
RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base  
stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are  
the following as also depicted in Section 8.1:  
Dual section or single ended  
Doherty  
Quadrature combined  
Push-pull  

与BLM7G1822S-20PBGY相关器件

型号 品牌 获取价格 描述 数据表
BLM7G1822S-20PBY ETC

获取价格

RF FET LDMOS 65V 32.3DB SOT12111
BLM7G1822S-40ABGY ETC

获取价格

RF FET LDMOS 65V 31.5DB SOT12122
BLM7G1822S-40ABY ETC

获取价格

RF FET LDMOS 65V 31.5DB SOT12112
BLM7G1822S-40PB AMPLEON

获取价格

LDMOS 2-stage power MMIC
BLM7G1822S-40PBG AMPLEON

获取价格

LDMOS 2-stage power MMIC
BLM7G1822S-40PBGY ETC

获取价格

RF FET LDMOS 65V 31.5DB SOT12121
BLM7G1822S-40PBY ETC

获取价格

RF FET LDMOS 65V 31.5DB SOT12111
BLM7G1822S-80ABGY ETC

获取价格

RF FET LDMOS 65V 31DB SOT12121
BLM7G1822S-80ABY ETC

获取价格

RF FET LDMOS 65V 31DB SOT12111
BLM7G1822S-80PBG AMPLEON

获取价格

LDMOS 2-stage power MMIC