Datasheet > BLM4953

BLM4953

更新时间： 2023-12-06 20:10:02

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
7页	939K
描述
"The BLM4953 uses advanced trench technology to prov ide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications."

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BLM4953 数据手册

Pb Free Product

BLM4953

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The BLM4953 uses advanced trench technology to prov ide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

Schematic diagram

GENERAL FEATURES

●

V_DS= -30V,I_D= -5.1A

R_DS(ON)< 95mΩ @ V_GS=-4.5V

R_DS(ON)< 65mΩ @ V_GS=-10V

●

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

Marking and pin Assignment

Application

●

PWM applications

Load switch

Power management

SOP-8 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

M4953

BLM4953

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwisenoted)

Parameter

Symbol

Limit

-30

Unit

Drain-Source Voltage

VDS

VGS

I_D

Gate-Source Voltage

±20

Drain Current-Continuous

-5.1

Drain Current-Pulsed (Note1)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

-20

I_DM

2.5

P_D

℃

-55 To 150

T_J,T_STG

Thermal Characteristic

℃/W

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

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