Datasheet > BLC6G10-160

BLC6G10-160

更新时间： 2024-09-30 03:05:59

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
9页	54K
描述
UHF power LDMOS transistor

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BLC6G10-160 数据手册

BLC6G10-160; BLC6G10LS-160

UHF power LDMOS transistor

Rev. 01 — 12 May 2006

Objective data sheet

1. Product proﬁle

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

800 MHz to 1000 MHz.

Table 1:

Typical performance

Typical RF performance at T_case= 25 °C in a class-AB production test circuit.

Mode of operation

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR

(dBc)

−40^[1]

(MHz)

(dB)

(%)

2-carrier W-CDMA

920 to 960

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a

supply voltage of 32 V and an I_Dqof 1200 mA:

N Average output power = 32 W

N Power gain = 23 dB

N Efﬁciency = 28 %

N ACPR = −40 dBc

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (800 MHz to 1000 MHz)

I Internally matched for ease of use

1.3 Applications

I RF power ampliﬁers for GSM, GSM EDGE, W-CDMA and CDMA base stations and

multi carrier applications in the 800 MHz to 1000 MHz frequency range.

12 3 4 5 6 7...9

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