Datasheet > BLC75N120

BLC75N120

更新时间： 2023-12-06 20:02:59

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	1516K
描述
BLC75N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor mat

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BLC75N120 数据手册

BLC75N120

Silicon Carbide Power MOSFET

1．Description

BLC75N120 is an N-channel enhancement type planar

MOSFET, with the revolutionary semiconductor material -

silicon carbide, which has the advantages of low on-

resistance, low capacitance and gate charge, and superior

switching performance. The device can provide higher

efficiency, faster operation frequency and compact system

size for power-electronic system application compared to

Silicon.

TO-247-3L

FEATURES

⚫

Revolutionary semiconductor material - Silicon Carbide

High blocking voltage with low on-resistance

Fast intrinsic diode with low reverse recovery

Low switching losses

100% Avalanche Tested

RoHS product

TO-247-4L

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

1200

Unit

R_DS(ON).Typ

APPLICATIONS

mΩ

⚫

Switching mode power supply

Solar Inverters

DC-DC Converter

TO-263-7L

ORDERING INFORMATION

Ordering Codes

BLC75N120-F

Product Code

Package

TO-247-3L

TO-247-4L

TO-263-7L

Packing

Tube

C75N120

BLC75N120-Z

BLC75N120-BG

Tube

BLC75N120-F

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLC75N120:1200V 75mΩ

(2) F：TO-247-3L

Z：TO-247-4L BG：TO-263-7L

BLC75N120

Rev 1.0

5/2023

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