Datasheet > BLC8G27LS-210PVY

BLC8G27LS-210PVY

更新时间： 2024-09-30 22:07:43

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描述
RF FET LDMOS 65V 17DB SOT12513

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BLC8G27LS-210PVY 数据手册

BLC8G27LS-210PV

Power LDMOS transistor

Rev. 4 — 24 November 2017

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor with improved video bandwidth for base station

applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

I_Dq

V_DSP_L(AV)

G_p

(dB) (%)

17 30

_D

ACPR_5M

(dBc)

29 ^[1]

(MHz)

(mA)

1730

(V)

(W)

2-carrier W-CDMA

2600 to 2700

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;

5 MHz carrier spacing.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Decoupling leads to enable improved video bandwidth performance (150 MHz typical)

 Designed for broadband operation (2500 MHz to 2700 MHz)

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the

2500 MHz to 2700 MHz frequency range

12 3 4 5 6 7...16

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