Datasheet > BLC8G27LS-60AVZ

BLC8G27LS-60AVZ

更新时间： 2024-09-30 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
16页	1489K
描述
TRANS RF 60W LDMOS DFM6F

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BLC8G27LS-60AVZ 数据手册

BLC8G27LS-60AV;

BLC8G27LS-60AVH

Power LDMOS transistor

Rev. 4 — 2 December 2016

Product data sheet

1. Product profile

1.1 General description

60 W LDMOS packaged asymmetrical Doherty power transistor for base station

applications at frequencies from 2300 MHz to 2690 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in the Doherty demo board.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%)

ACPR

(dBc)

30 ^[1]

(MHz)

(dB)

15.2

13.6

1-carrier W-CDMA

IS-95

2496 to 2690

2300 to 2400

[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Decoupling leads to enable improved video bandwidth

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifier for LTE base stations and multi carrier applications in the

2300 MHz to 2690 MHz frequency range

12 3 4 5 6 7...16

中文翻译

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