Datasheet > BLC9G21LS-60AVY

BLC9G21LS-60AVY

更新时间： 2024-09-30 22:07:43

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描述
BLC9G21LS-60AV/SOT1275/REELDP

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BLC9G21LS-60AVY 数据手册

BLC9G21LS-60AV

Power LDMOS transistor

Rev. 1 — 6 July 2017

Product data sheet

1. Product profile

1.1 General description

60 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 1805 MHz to 2200 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in the Doherty demo board.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

39 ^[1]

(MHz)

(dB)

17.5

(%)

1-carrier W-CDMA

1930 to 1990

2.5

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Asymmetric design to achieve optimum efficiency across the band

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to

2200 MHz frequency range

12 3 4 5 6 7...15

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