BLC9H10XS-600A
Power LDMOS transistor
Rev. 1 — 10 August 2018
Product data sheet
1. Product profile
1.1 General description
600 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 616 MHz to 960 MHz.
Table 1.
Typical RF performance at Tcase = 25 °C in an asymmetrical Doherty demo circuit. VDS = 48 V;
Dq = 600 mA (main); VGS(amp)peak = 0.48 V, unless otherwise specified.
Typical performance 940 MHz
I
Test signal
f
VDS
(V)
48
PL(AV) Gp
ηD
ACPR
(MHz)
(dBm) (dB)
(%)
53.9
(dBc)
31.4 [1]
1-carrier W-CDMA
925 to 960
50.5
17.7
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on
CCDF.
Table 2.
Typical RF performance at Tcase = 25 °C in an asymmetrical Doherty demo circuit. VDS = 50 V;
Dq = 600 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified.
Typical performance 880 MHz
I
Test signal
f
VDS
(V)
50
PL(AV) Gp
ηD
ACPR
(MHz)
(dBm) (dB)
(%)
52.7
(dBc)
30.8 [1]
1-carrier W-CDMA
869 to 894
50.5
18.3
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on
CCDF.
Table 3.
Typical RF performance at Tcase = 25 °C in an asymmetrical Doherty demo circuit. VDS = 47 V;
Dq = 600 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Typical performance 780 MHz
I
Test signal
f
VDS
(V)
47
PL(AV) Gp
ηD
ACPR
(MHz)
(dBm) (dB)
(%)
54.2
(dBc)
33.8 [1]
1-carrier W-CDMA
758 to 803
50.5
17.7
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on
CCDF.
Table 4.
Typical RF performance at Tcase = 25 °C in an asymmetrical Doherty demo circuit. VDS = 48 V;
Dq = 600 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified.
Typical performance 750 MHz
I
Test signal
f
VDS
(V)
48
PL(AV) Gp
ηD
ACPR
(MHz)
(dBm) (dB)
(%)
57.2
(dBc)
30.8 [1]
1-carrier W-CDMA
729 to 768
50.5
17.5
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on
CCDF.