Datasheet > BLC9H10XS-350A

BLC9H10XS-350A

更新时间： 2024-10-01 17:15:31

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
18页	1891K
描述
Power LDMOS transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLC9H10XS-350A 数据手册

BLC9H10XS-350A

Power LDMOS transistor

Rev. 2 — 13 July 2018

Product data sheet

1. Product profile

1.1 General description

350 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 617 MHz to 960 MHz.

Table 1.

Typical RF performance at T_case= 25 °C in an asymmetrical Doherty test circuit. V_DS= 50 V;

_Dq= 400 mA (main); V_GS(amp)peak= 0.8 V, unless otherwise specified.

Typical performance 630 MHz

Test signal

V_DS

(V)

P_L(AV)

(dBm)

G_p

η_D

ACPR

(MHz)

(dB)

19.5

(%)

54.7

(dBc)

26.7 ^[1]

1-carrier W-CDMA

617 to 652

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF.

Table 2.

Typical RF performance at T_case= 25 °C in an asymmetrical Doherty demo circuit. V_DS= 46 V;

_Dq= 250 mA (main); V_GS(amp)peak= 0.5 V, unless otherwise specified.

Typical performance 720 MHz

Test signal

V_DS

(V)

P_L(AV)

(dBm)

47.5

G_p

η_D

ACPR

(MHz)

(dB)

18.9

(%)

55.1

(dBc)

29.6 ^[1]

1-carrier W-CDMA

717 to 728

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF.

Table 3.

Typical RF performance at T_case= 25 °C in an asymmetrical Doherty production test circuit.

_DS= 50 V; I_Dq= 400 mA (main); V_GS(amp)peak= 0.55 V, unless otherwise specified.

Typical performance 880 MHz

Test signal

V_DS

(V)

P_L(AV)

(dBm)

G_p

η_D

ACPR

(MHz)

(dB)

18.3

(%)

(dBc)

31.0 ^[1]

1-carrier W-CDMA

869 to 894

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF.

Table 4.

Typical RF performance at T_case= 25 °C in an asymmetrical Doherty test circuit. V_DS= 50 V;

_Dq= 450 mA (main); V_GS(amp)peak= 0.65 V, unless otherwise specified.

Typical performance 940 MHz

Test signal

V_DS

(V)

P_L(AV)

(dBm)

G_p

η_D

ACPR

(MHz)

(dB)

(%)

53.5

(dBc)

30.9 ^[1]

1-carrier W-CDMA

925 to 960

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF.

12 3 4 5 6 7...18

中文翻译

下载PDF

与BLC9H10XS-350A相关器件

型号	品牌	获取价格	描述	数据表
BLC9H10XS-500A	AMPLEON	获取价格	Power LDMOS transistor
BLC9H10XS-505A	AMPLEON	获取价格	Power LDMOS transistor
BLC9H10XS-600A	AMPLEON	获取价格	Power LDMOS transistor
BLC9H10XS-606A	AMPLEON	获取价格	Power LDMOS transistor
BLC9H10XS-60P	AMPLEON	获取价格	Power LDMOS transistor
BL-CA1436	BRTLED	获取价格	LED LAMPS
BLCC121M	3M	获取价格	Adustable Elastic Fabric(Standard Performance)
BLCC61M	3M	获取价格	Adustable Elastic Fabric(Standard Performance)
BLC-L01D	ASC	获取价格	BLC Series Low Pressure Compact Sensors
BLC-L05D	ASC	获取价格	BLC Series Low Pressure Compact Sensors