Datasheet > BLC9H10XS-606A

BLC9H10XS-606A

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1155K
描述
Power LDMOS transistor

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BLC9H10XS-606A 数据手册

BLC9H10XS-606A

Power LDMOS transistor

Rev. 1 — 24 March 2020

Product data sheet

1. Product profile

1.1 General description

600 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 616 MHz to 960 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo circuit. V_DS= 50 V;

_Dq= 400 mA (main); V_GS(amp)peak= 0.7 V, unless otherwise specified.

Typical performance 634.5/737 MHz

Test signal

V_DS

(V)

P_L(AV)G_p

_D

ACPR

(MHz)

(dBm) (dB)

(%)

52.3

50.2

(dBc)

1-carrier W-CDMA

617 to 652

728 to 746

49.2

19.1

19.5

33.5 ^[1][2]

35 ^[1][2]

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on

CCDF.

[2] Test data is based on wideband demo measurement (f = 617 MHz to 746 MHz).

Table 2.

Typical performance 789.5 MHz

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo circuit. V_DS= 48 V;

I_Dq= 500 mA (main); V_GS(amp)peak= 0.05 V, unless otherwise specified.

Test signal

V_DS

(V)

P_L(AV)G_p

_D

ACPR

(dBc)

29.3 ^[1]

(MHz)

(dBm) (dB)

(%)

55.5

1-carrier W-CDMA

758 to 821

50.5

18.8

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on

CCDF.

Table 3.

Typical performance 881.5 MHz

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo circuit. V_DS= 48 V;

I_Dq= 400 mA (main); V_GS(amp)peak= 0.05 V, unless otherwise specified.

Test signal

V_DS

(V)

P_L(AV)G_p

_D

ACPR

(dBc)

30.2 ^[1]

(MHz)

(dBm) (dB)

(%)

53.2

1-carrier W-CDMA

869 to 894

50.5

17.9

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on

CCDF.

Table 4.

Typical performance 942 MHz

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo circuit. V_DS= 48 V;

I_Dq= 350 mA (main); V_GS(amp)peak= 0.05 V, unless otherwise specified.

Test signal

V_DS

(V)

P_L(AV)G_p

_D

ACPR

(dBc)

29.2 ^[1]

(MHz)

(dBm) (dB)

(%)

54.7

1-carrier W-CDMA

925 to 960

50.5

17.2

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on

CCDF.

12 3 4 5 6 7...13

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