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BLC9G20XS-400AVT PDF预览

BLC9G20XS-400AVT

更新时间: 2024-09-30 22:07:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
17页 1761K
描述
RF FET LDMOS 65V 16.2DB SOT12587

BLC9G20XS-400AVT 数据手册

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BLC9G20XS-400AVT  
Power LDMOS transistor  
Rev. 3 — 24 November 2017  
Product data sheet  
1. Product profile  
1.1 General description  
400 W LDMOS packaged asymmetric Doherty power transistor for base station  
applications at frequencies from 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz.  
Table 1.  
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.  
DS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.  
Typical performance  
V
Test signal  
f
VDS  
(V)  
32  
PL(AV)  
(W)  
Gp  
D  
ACPR  
(dBc)  
39 [1]  
(MHz)  
(dB)  
16.2  
(%)  
45  
1-carrier W-CDMA  
1805 to 1880  
87  
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on  
CCDF.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low thermal resistance providing excellent thermal stability  
Lower output capacitance for improved performance in Doherty applications  
Designed for low memory effects providing excellent digital pre-distortion capability  
Internally matched for ease of use  
Integrated ESD protection  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to  
1880 MHz and 1930 MHz to 1995 MHz frequency range  

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