Datasheet > BLC8G27LS-245AVJ

BLC8G27LS-245AVJ

更新时间： 2024-09-30 22:07:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	1234K
描述
TRANS RF 240W 65V LDMOS SOT1251

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BLC8G27LS-245AVJ 数据手册

BLC8G27LS-245AV

Power LDMOS transistor

Rev. 4 — 24 November 2017

Product data sheet

1. Product profile

1.1 General description

240 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty demo board. V_DS= 28 V;

_Dq= 500 mA (main); V_GS(amp)peak= 0.5 V, unless otherwise specified.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

35 ^[1]

(MHz)

(dB)

14.5

(%)

1-carrier W-CDMA

2500 to 2690

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for broadband operation (2500 MHz to 2700 MHz)

 Asymmetric design to achieve optimum efficiency across the band

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to

2700 MHz frequency range

12 3 4 5 6 7...13

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