Datasheet > BLC8G24LS-240AVY

BLC8G24LS-240AVY

更新时间： 2024-09-30 22:07:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	1177K
描述
RF FET LDMOS 65V 14.5DB SOT12521

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BLC8G24LS-240AVY 数据手册

BLC8G24LS-240AV

Power LDMOS transistor

Rev. 6 — 2 December 2016

Product data sheet

1. Product profile

1.1 General description

240 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty production test circuit.

_DS= 28 V; I_Dq= 500 mA (main); V_GS(amp)peak= 0.30 V, unless otherwise specified.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

29 ^[1]

(MHz)

(dB)

(%)

1-carrier W-CDMA

2300 to 2400

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.

1.2 Features and benefits

 Excellent ruggedness

 High-efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for broadband operation (2300 MHz to 2400 MHz)

 Asymmetric design to achieve optimum efficiency across the band

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to

2400 MHz frequency range

12 3 4 5 6 7...13

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