Datasheet > BLC8G27LS-100AVZ

BLC8G27LS-100AVZ

更新时间： 2024-09-30 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
15页	1370K
描述
RF FET LDMOS 65V 15.5DB SOT12751

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BLC8G27LS-100AVZ 数据手册

BLC8G27LS-100AV

Power LDMOS transistor

Rev. 5 — 24 May 2017

Product data sheet

1. Product profile

1.1 General description

100 W LDMOS packaged asymmetrical Doherty power transistor for base station

applications at frequencies from 2496 MHz to 2690 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in the Doherty demo board.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR

(dBc)

30 ^[1]

(MHz)

(dB)

15.5

(%)

1-carrier W-CDMA

2520 to 2620

[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Decoupling leads to enable improved video bandwidth

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifier for LTE base stations and multi carrier applications in the

2496 MHz to 2690 MHz frequency range

12 3 4 5 6 7...15

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