Datasheet > BLC8G20LS-310AVZ

BLC8G20LS-310AVZ

更新时间： 2024-09-30 22:07:43

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描述
RF FET LDMOS 65V 17DB SOT12583

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BLC8G20LS-310AVZ 数据手册

BLC8G20LS-310AV

Power LDMOS transistor

Rev. 5 — 24 November 2017

Product data sheet

1. Product profile

1.1 General description

310 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 1900 MHz to 2000 MHz.

Table 1.

Typical RF performance at T_case= 25 C in an asymmetrical Doherty production test circuit.

_DS= 28 V; I_Dq= 650 mA (main); V_GS(amp)peak= 0.5 V, unless otherwise specified.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(dBm)

47.5

G_p

_D

ACPR

(dBc)

33 ^[1]

(MHz)

(dB)

(%)

42.5

1-carrier W-CDMA

1930 to 1995

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on

CCDF per carrier.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to

2000 MHz frequency range

12 3 4 5 6 7...16

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