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BLC6G20-110 PDF预览

BLC6G20-110

更新时间: 2024-09-30 03:05:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体射频场效应晶体管光电二极管功效放大器局域网
页数 文件大小 规格书
9页 52K
描述
UHF power LDMOS transistor

BLC6G20-110 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:FLANGE MOUNT, R-PDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
其他特性:HIGH EFFICIENCY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:L BAND
JESD-30 代码:R-PDFM-F2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLC6G20-110 数据手册

 浏览型号BLC6G20-110的Datasheet PDF文件第2页浏览型号BLC6G20-110的Datasheet PDF文件第3页浏览型号BLC6G20-110的Datasheet PDF文件第4页浏览型号BLC6G20-110的Datasheet PDF文件第5页浏览型号BLC6G20-110的Datasheet PDF文件第6页浏览型号BLC6G20-110的Datasheet PDF文件第7页 
BLC6G20-110; BLC6G20LS-110  
UHF power LDMOS transistor  
Rev. 01 — 30 January 2006  
Objective data sheet  
1. Product profile  
1.1 General description  
110 W LDMOS power transistor for base station applications at frequencies from  
1800 MHz to 2000 MHz.  
Table 1:  
Typical performance  
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.  
Mode of operation f  
(MHz)  
1930 to 1990 28  
1930 to 1990 28  
VDS PL  
Gp  
ηD  
(%)  
51  
40  
32  
ACPR400  
ACPR600  
EVM IMD3  
ACPR  
(V) (W)  
(dB)  
17  
(dBc)  
(dBc)  
(%)  
-
(dBc)  
(dBc)  
CW  
100  
-
-
-
-
GSM EDGE  
48 (AV)  
25 (AV)  
17.5  
18  
60  
70  
2.1  
-
-
-
2-carrier W-CDMA 1930 to 1990 28  
-
-
37[1]  
40[1]  
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier  
spacing 10 MHz.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a  
supply voltage of 28 V and an IDq of 950 mA:  
Output power = 25 W (AV)  
Gain = 18 dB  
Efficiency = 32 %  
IMD3 = 37 dBc  
ACPR = 40 dBc  
Easy power control  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (1800 MHz to 2000 MHz)  
Internally matched for ease of use  

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