Datasheet > BL2306BD-3L

BL2306BD-3L

更新时间： 2024-04-09 19:00:41

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	852K
描述
3.16A, 30V, 0.75W, N Channel, Power MOSFETs

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BL2306BD-3L 数据手册

N-Channel Enhancement Mode MOSFET

BL2306BD-3L

Features



High dense cell design for extremely low R_DS(ON)

Rugged and reliable

Mechanical Data



Case: SOT-23-3L

Molding Compound, UL Flammability Classification Rating 94V-0.

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208.

SOT-23-3L

Ordering Information

Part Number

Package

Shipping

Marking Code

BL2306BD-3L

SOT-23

3000 pcs / Tape & Reel

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Parameter

Symbol

Value

Units

Drain-Source Voltage

V_DSS

Gate -Source Voltage

V_GSS

±20

3.16

2.7

Continuous Drain Current

T_A= 25℃

T_A= 70℃

(Note1,2)

I_D

Pulsed Drain Current ,PW ≤ 300 us, Duty Cycle ≤ 2%

I_DM

(Note1,2)

Continuous Source Current

I_S

0.62

0.75

0.48

Power Dissipation

TA=25℃

TA=70℃

(Note1,2)

P_D

Thermal Characteristics

Parameter

Symbol

Limits

166

Unit

℃/W

℃

(Note1)

Thermal Resistance Junction to Ambient Air

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

T_j

150

T_STG

-55 to +150

℃

Notes：

1. Surface Mounted on FR4 Board, t≤5 sec.

2. Pulse width limited by maximum junction temperature.

3. Pulse test: PW ≤300 us duty cycle≤2%.

MTM0509A: August 2021

www.gmesemi.com

12 3 4 5

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