Datasheet > BL2311

BL2311

更新时间： 2024-11-25 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	647K
描述
4.2A, 20V, 1.37W, P Channel, Power MOSFETs

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BL2311 数据手册

Product Specification

P-Channel Enhancement Mode Power Mosfet

BL2311

FEATURES



Super High Dense Cell Design for Extremely

Low R_DS(ON)



Reliable and Rugged

Electrostatic Sensitive Devices.

APPLICATIONS



Power Management in Notebook.

Portable Equipment.

SOT-23

Battery Powered System.

ORDERING INFORMATION

Type No.

BL2311

Marking

2311

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

-20

±8

V_GSS

Gate -Source voltage

Maximum Drain current

TA=25℃

TA=70℃

-4.2

-3.4

I_D

I_DM

P_D

Pulsed Drain current

Power Dissipation

-30

1.37

R_θJA

Thermal resistance,Junction-to-Ambient

℃/W

Operating Junction and Storage

Temperature Range

T_J,T_stg

-55~+150

℃

MTM0095A: December 2021

www.gmesemi.com

12 3 4 5

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