Datasheet > BL2312DF1

BL2312DF1

更新时间： 2024-04-09 19:02:49

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	867K
描述
9.5A, 20V, 2.4W, N Channel, Power MOSFETs

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BL2312DF1 数据手册

N-Channel Enhancement Mode MOSFET

BL2312DF1

Features

⚫



⚫

Super low gate charge

Green device available

Excellent c_dV/ dt effect decline

Advanced high cell density trench technology

Mecha nical Data



Case: DFN2020-6L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

DFN2020-6L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL2312DF1

DFN2020-6L

3000 pcs / Tape & Reel

2312

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_DSS

V_GSS

I_D

±8

9.5

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C ) ^*3

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

P_D

R_θJA

T_J

2.4

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0613A: August 2023 [V2.1]

www.gmesemi.com

12 3 4 5

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