Datasheet > BL2312DF1

BL2312DF1

更新时间： 2024-11-28 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	867K
描述
9.5A, 20V, 2.4W, N Channel, Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL2312DF1 数据手册

N-Channel Enhancement Mode MOSFET

BL2312DF1

Features

⚫



⚫

Super low gate charge

Green device available

Excellent c_dV/ dt effect decline

Advanced high cell density trench technology

Mecha nical Data



Case: DFN2020-6L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

DFN2020-6L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL2312DF1

DFN2020-6L

3000 pcs / Tape & Reel

2312

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_DSS

V_GSS

I_D

±8

9.5

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C ) ^*3

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

P_D

R_θJA

T_J

2.4

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0613A: August 2023 [V2.1]

www.gmesemi.com

12 3 4 5

中文翻译

下载PDF

与BL2312DF1相关器件

型号	品牌	获取价格	描述	数据表
B-L231X	MOLEX	获取价格	Wire Terminal, 2mm2
BL-23497-000	KNOWLES	获取价格	MICROPHONE
BL-23G	KODENSHI	获取价格	Emitter for Optical Fiber(GaAlAs)
BL23N50	BELLING	获取价格	BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL2456	BELLING	获取价格	BL2456
BL24C02	BELLING	获取价格	The device is optimized for use in many industrial and commercial applications
BL24C02A	BELLING	获取价格	Single supply voltage and high speed
BL24C02F	BELLING	获取价格	BL24C02F提供2048比特串行电可擦写存储器，组成256个字节，每页16个字节，共1
BL24C02H	BELLING	获取价格	BL24C02F提供2048比特串行电可擦写存储器，组成256个字节，每页16个字节，共1
BL24C04	BELLING	获取价格	The device is optimized for use in many industrial and commercial applications