品牌 | Logo | 应用领域 |
银河微电 - BL Galaxy Electrical | / | |
页数 | 文件大小 | 规格书 |
5页 | 410K | |
描述 | ||
20V, N Channel MOSFETs |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BL2312DF1 | BL Galaxy Electrical |
获取价格 |
9.5A, 20V, 2.4W, N Channel, Power MOSFETs | |
B-L231X | MOLEX |
获取价格 |
Wire Terminal, 2mm2 | |
BL-23497-000 | KNOWLES |
获取价格 |
MICROPHONE | |
BL-23G | KODENSHI |
获取价格 |
Emitter for Optical Fiber(GaAlAs) | |
BL23N50 | BELLING |
获取价格 |
BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology | |
BL2456 | BELLING |
获取价格 |
BL2456 | |
BL24C02 | BELLING |
获取价格 |
The device is optimized for use in many industrial and commercial applications | |
BL24C02A | BELLING |
获取价格 |
Single supply voltage and high speed | |
BL24C02F | BELLING |
获取价格 |
BL24C02F提供2048比特串行电可擦写存储器,组成256个字节,每页16个字节,共1 | |
BL24C02H | BELLING |
获取价格 |
BL24C02F提供2048比特串行电可擦写存储器,组成256个字节,每页16个字节,共1 |