品牌 | Logo | 应用领域 |
银河微电 - BL Galaxy Electrical | / | |
页数 | 文件大小 | 规格书 |
5页 | 408K | |
描述 | ||
4.9A, 20V, 0.75W, N Channel, Power MOSFETs |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BL2312-6L | BL Galaxy Electrical |
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20V, N Channel MOSFETs | |
BL2312DF1 | BL Galaxy Electrical |
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9.5A, 20V, 2.4W, N Channel, Power MOSFETs | |
B-L231X | MOLEX |
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Wire Terminal, 2mm2 | |
BL-23497-000 | KNOWLES |
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MICROPHONE | |
BL-23G | KODENSHI |
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Emitter for Optical Fiber(GaAlAs) | |
BL23N50 | BELLING |
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BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology | |
BL2456 | BELLING |
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BL2456 | |
BL24C02 | BELLING |
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The device is optimized for use in many industrial and commercial applications | |
BL24C02A | BELLING |
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Single supply voltage and high speed | |
BL24C02F | BELLING |
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BL24C02F提供2048比特串行电可擦写存储器,组成256个字节,每页16个字节,共1 |