Datasheet > BGU8821A

BGU8821A

更新时间： 2022-06-24 15:43:02

品牌	Logo	应用领域
恩智浦 - NXP		光电二极管
页数	文件大小	规格书
41页	566K
描述
Dual channel low-noise high linearity amplifier with DSA and SPDT

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BGU8821A 数据手册

NXP Semiconductors

BGU8821/A

Dual channel low-noise high linearity amplifier with DSA and SPDT

Table 3.ꢀQuick reference data BGU8821/A SPDT

f = 900 MHz; V_CC= 5 V; T_amb= 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured

in an application board as shown in Figure 44 with components listed in Table 33 optimized for f = 900 MHz

Symbol

I_CC

Parameter

Conditions

Min Typ Max Unit

supply current

2.1

[1]

α_ins

insertion loss

1.3 1.6 dB

RL_in

input return loss

all SPDT

P_i(1dB)

IP3_i

input power at 1 dB gain compression

input third-order intercept point

dBm

2-tone; tone spacing = 1 MHz;

P_i= +5 dBm per tone

[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded for all RF parameters.

5 Ordering information

Table 4.ꢀTable 4. Ordering information

Type

Orderable

Package

number

part number

Name

Description

Version

BGU8821/A BGU8821/AY HVLGA44 plastic thermal enhanced very thin profile land grid array

package; no leads; 44 terminals; body 5 × 5 × 0.72 mm

SOT1431-1

6 Functional diagram

Disable Main Channel

VDD_SPI

RFIN_M

DSA M

LNA1 M

LNA2 M

VDD_SPDT

DSA_0_X dB Main

SW_RF2

SW_RFC

SW_RF1

SCLK

CSB

SDIO

SDO

SPI

GPO/DSA_0_X dB Diversity

LNA2 D

LNA1 D

RFIN_D

DSA D

SPDT

Disable Diversity Channel

aaa-020599

Figure 1.ꢀFunctional diagram

BGU8821/A

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 6 — 15 April 2020

3 / 41

1 234 5 6 7...41

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