Datasheet > BGU8H1

BGU8H1

更新时间： 2024-03-03 10:11:12

品牌	Logo	应用领域
恩智浦 - NXP		LTE
页数	文件大小	规格书
11页	100K
描述
SiGe:C Low Noise Amplifier MMIC for LTE

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BGU8H1 数据手册

BGU8H1

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;

SiGe:C low-noise amplifier MMIC for LTE

Rev. 3 — 16 January 2017

Product data sheet

1. General description

The BGU8H1 is, also known as the LTE1001H, a Low-Noise Amplifier (LNA) for LTE

receiver applications, available in a small plastic 6-pin extremely thin leadless package.

The BGU8H1 requires one external matching inductor.

The BGU8H1 adapts itself to the changing environment resulting from co-habitation of

different radio systems in modern cellular handsets. It has been designed for low power

consumption and optimal performance. At low jamming power levels, it delivers 13 dB

gain at a noise figure of 0.9 dB. During high-power levels, it temporarily increases its bias

current to improve sensitivity.

The BGU8H1 is optimized for 2300 MHz to 2690 MHz.

2. Features and benefits

 Operating frequency from 2300 MHz to 2690 MHz

 Noise figure = 0.9 dB

 Gain = 13 dB

 High input 1 dB compression point of 1 dBm

 High in band IP3_iof 8 dBm

 Supply voltage 1.5 V to 3.1 V

 Self-shielding package concept

 Integrated supply decoupling capacitor

 Optimized performance at a supply current of 5.0 mA

 Power-down mode current consumption < 1 A

 Integrated temperature stabilized bias for easy design

 Require only one input matching inductor

 Output DC decoupled

 ESD protection on all pins (HBM > 2 kV)

 Integrated matching for the output

 Available in a 6-pin leadless package 1.1 mm  0.7 mm  0.37 mm; 0.4 mm pitch:

SOT1232

 180 GHz transit frequency - SiGe:C technology

 Moisture sensitivity level 1

12 3 4 5 6 7...11

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