Datasheet > BGX50A_07

BGX50A_07

更新时间： 2024-11-24 08:52:47

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
6页	69K
描述
Silicon Switching Diode Array

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中文翻译

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数据手册

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BGX50A_07 数据手册

BGX50A...

Silicon Switching Diode Array

• Bridge configuration

• High-speed switching diode chip

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BGX50A

Type

BGX50A

Package

Configuration

Marking

SOT143

bridge

U1s

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

140

°C

Non-repetitive peak surge forward current

Total power dissipation

FSM

210

tot

T ≤ 74°C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

BGX50A

360

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-27

12 3 4 5 6

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