是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
JESD-609代码: | e0 | 安装特点: | THROUGH HOLE MOUNT |
端子数量: | 12 | 最高工作温度: | 90 °C |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | SIP12,.1TB |
电源: | 6 V | 子类别: | RF/Microwave Amplifiers |
表面贴装: | NO | 技术: | HYBRID |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BGY110D | PHILIPS |
获取价格 |
RF/Microwave Amplifier, Hybrid, | |
BGY110D | NXP |
获取价格 |
RF/Microwave Amplifier, 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER | |
BGY110E | PHILIPS |
获取价格 |
RF/Microwave Amplifier, Hybrid, | |
BGY110F | PHILIPS |
获取价格 |
RF/Microwave Amplifier, Hybrid, | |
BGY110G | PHILIPS |
获取价格 |
RF/Microwave Amplifier, Hybrid, | |
BGY112A | NXP |
获取价格 |
RF/Microwave Amplifier, 68 MHz - 88 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | |
BGY112A | PHILIPS |
获取价格 |
RF/Microwave Amplifier, Hybrid, | |
BGY112B | NXP |
获取价格 |
RF/Microwave Amplifier, 132 MHz - 156 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | |
BGY112B | PHILIPS |
获取价格 |
RF/Microwave Amplifier, Hybrid, | |
BGY112C | NXP |
获取价格 |
RF/Microwave Amplifier, 146 MHz - 174 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |