Datasheet > BGSX44MU18

BGSX44MU18

更新时间： 2024-09-22 14:53:51

品牌	Logo	应用领域
英飞凌 - INFINEON		LTE
页数	文件大小	规格书
23页	787K
描述
The BGSX44MU18 RF CMOS switch is specifically designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch offers low insertion loss and low harmonic generation.

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BGSX44MU18 数据手册

BGSX44MU18

4P4T antenna cross switch with MIPI RFFE control interface

Features

• High linearity up to 37 dBm peak power

• Fast switching time (max 2 µs) for 5G SRS applications

• Low insertion loss and high port to port isolation up to 7.125 GHz

• Low power consumption allows to use MIPI RFFE supply

• MIPI RFFE 2.1 control interface

• Soꢀware and hardware programmable USID

•

Ultra low proﬁle lead-less plastic package (MSL-3, 260 °C per IPC/JEDEC

J-STD-20)

• RoHS and WEEE compliant package

Potential applications

• 4P4T antenna routing/swapping for cellular mobile devices

• 4P4T antenna routing/swapping for 5G SRS application

• GSM, WCDMA, LTE and 5G FR1 applications

• 4x4 MIMO applications

• SAR reduction

Product validation

Qualiﬁed for industrial applications according to the relevant tests of JEDEC47/20/22.

Description

The BGSX44MU18 RF CMOS switch is speciﬁcally designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch

oﬀers low insertion loss and low harmonic generation.

The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to

1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC

blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only

2.0 mm x 2.4 mm and a thickness of 0.63 mm.

Table 1: Ordering information

Product type

Marking

Package

BGSX44MU18

X44A

PG-WLGA-18-1

Datasheet

www.inﬁneon.com

Please read the Important Notice and Warnings at the end of this document

Revision 2.2

2023-05-30

12 3 4 5 6 7...23

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