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BGU7005,115 PDF预览

BGU7005,115

更新时间: 2024-09-21 14:32:55
品牌 Logo 应用领域
恩智浦 - NXP 全球定位系统射频微波
页数 文件大小 规格书
20页 1118K
描述
BGU7005 - SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass SON 6-Pin

BGU7005,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:SOLCC6,.04,20针数:6
Reach Compliance Code:compliant风险等级:1.6
特性阻抗:50 Ω构造:COMPONENT
增益:14 dB最大输入功率 (CW):
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:6
最大工作频率:1610 MHz最小工作频率:1559 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOLCC6,.04,20
电源:1.8 V射频/微波设备类型:NARROW BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
端子面层:Tin (Sn)Base Number Matches:1

BGU7005,115 数据手册

 浏览型号BGU7005,115的Datasheet PDF文件第2页浏览型号BGU7005,115的Datasheet PDF文件第3页浏览型号BGU7005,115的Datasheet PDF文件第4页浏览型号BGU7005,115的Datasheet PDF文件第5页浏览型号BGU7005,115的Datasheet PDF文件第6页浏览型号BGU7005,115的Datasheet PDF文件第7页 
BGU7005  
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo  
and Compass  
Rev. 6 — 18 January 2017  
Product data sheet  
1. Product profile  
1.1 General description  
The BGU7005 is, also known as the GPS1101M, a Low Noise Amplifier (LNA) for GNSS  
receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The  
BGU7005 requires only one external matching inductor and one external decoupling  
capacitor.  
The BGU7005 adapts itself to the changing environment resulting from co-habitation of  
different radio systems in modern cellular handsets. It has been designed for low power  
consumption and optimal performance when jamming signals from co-existing cellular  
transmitters are present. At low jamming power levels it delivers 16.5 dB gain at a noise  
figure of 0.85 dB. During high jamming power levels, resulting for example from a cellular  
transmit burst, it temporarily increases its bias current to improve sensitivity.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
Covers full GNSS L1 band, from 1559 MHz to 1610 MHz  
Noise figure (NF) = 0.85 dB  
Gain 16.5 dB  
High input 1 dB compression point Pi(1dB) of 11 dBm  
High out of band IP3i of 9 dBm  
Supply voltage 1.5 V to 3.1 V  
Power-down mode current consumption < 1 A  
Optimized performance at low supply current of 4.5 mA  
Integrated matching for the output  
Requires only one input matching inductor and one supply decoupling capacitor  
Input and output DC decoupled  
ESD protection on all pins (HBM > 2 kV)  
Integrated temperature stabilized bias for easy design  
Small 6-pin leadless package 1 mm 1.45 mm 0.5 mm  
110 GHz transit frequency - SiGe:C technology  
 
 
 

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