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BGA2001

更新时间: 2024-10-27 22:27:39
品牌 Logo 应用领域
恩智浦 - NXP 射频和微波射频放大器微波放大器
页数 文件大小 规格书
12页 98K
描述
Silicon MMIC amplifier

BGA2001 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC, SOT-343R, 4 PIN
Reach Compliance Code:compliant风险等级:5.69
Is Samacsys:N其他特性:LOW NOISE
特性阻抗:50 Ω构造:COMPONENT
增益:19.5 dBJESD-609代码:e3
最大工作频率:1800 MHz最小工作频率:900 MHz
封装主体材料:PLASTIC/EPOXY封装等效代码:SOT-343R
电源:2.5 V射频/微波设备类型:NARROW BAND LOW POWER
子类别:RF/Microwave Amplifiers技术:BIPOLAR
端子面层:Tin (Sn)Base Number Matches:1

BGA2001 数据手册

 浏览型号BGA2001的Datasheet PDF文件第1页浏览型号BGA2001的Datasheet PDF文件第2页浏览型号BGA2001的Datasheet PDF文件第3页浏览型号BGA2001的Datasheet PDF文件第5页浏览型号BGA2001的Datasheet PDF文件第6页浏览型号BGA2001的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2001  
MGS606  
200  
handbook, halfpage  
100 pF  
P
handbook, halfpage  
R1  
tot  
V
S
(mW)  
L1  
V
150  
C
RF out  
GND  
S-OUT  
100  
50  
BGA2001  
IN  
GND  
C
0
0
MGS605  
RF in  
50  
100  
150  
200  
T
(°C)  
s
Fig.2 Typical application circuit.  
Fig.3 Power derating curve.  
MGS607  
MGS608  
12  
16  
handbook, halfpage  
handbook, halfpage  
I
VS-OUT  
(mA)  
10  
I
VS-OUT  
(mA)  
(8)  
(7)  
12  
8
6
4
2
(6)  
(5)  
8
4
(4)  
(3)  
(2)  
(1)  
0
0
0
40  
1
2
3
4
5
0
40  
80  
120  
(°C)  
V
(V)  
T
VS-OUT  
amb  
(1) VVS-OUT = 1 V  
(2) VVS-OUT = 1.5 V  
(3) VVS-OUT = 2 V  
(4) VVS-OUT = 2.5 V  
(5) VVS-OUT = 3 V  
(6) VVS-OUT = 3.5 V  
(7) VVS-OUT = 4 V  
(8) VVS-OUT = 4.5 V.  
Fig.4 Bias current (IVS-OUT) as a function of  
ambient temperature with VVS-OUT as  
parameter; typical values.  
Fig.5 Bias current (IVS-OUT) as a function of  
voltage at the output pin (VVS-OUT);  
typical values.  
1999 Aug 11  
4

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