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BFY405_11 PDF预览

BFY405_11

更新时间: 2024-11-24 12:50:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管射频
页数 文件大小 规格书
4页 145K
描述
HiRel NPN Silicon RF Transistor

BFY405_11 数据手册

 浏览型号BFY405_11的Datasheet PDF文件第2页浏览型号BFY405_11的Datasheet PDF文件第3页浏览型号BFY405_11的Datasheet PDF文件第4页 
BFY405  
HiRel NPN Silicon RF Transistor  
4
1
3
HiRel Discrete and Microwave Semiconductor  
For Low Current Applications  
For Oscillators up to 12 GHz  
Noise Figure F = 1.15 dB at 1.8 GHz  
2
Outstanding Gms = 23dB at 1.8 GHz  
Hermetically sealed microwave package  
Transition Frequency f = 20 GHz  
T
SIEGET 25-Line  
Infineon Technologies Grounded Emitter Transistor-  
25 GHz f -Line  
T
Space Qualified  
ESA/SCC Detail Spec. No.: 5611/008  
Type Variant No. 01  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
1
2
3
4
BFY405 (ql)  
(ql) Quality Level:  
-
see below  
C
E
B
E
Micro-X  
P: Professional Quality  
H: High Rel Quality  
S: Space Quality  
ES: ESA Space Quality  
(see order instructions for ordering example)  
IFAG IMM RDP D HIR  
1 of 4  
V2, February 2011  

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