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BFY450 (ES) PDF预览

BFY450 (ES)

更新时间: 2024-11-25 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON 微波晶体管
页数 文件大小 规格书
6页 385K
描述
高可靠性微波晶体管

BFY450 (ES) 数据手册

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BFY450  
HiRel NPN Silicon RF Transistor  
BFY450(ES)  
4
1
3
2
Features  
For Medium Power Amplifiers  
Compression point P-1dB = 19 dBm at 1.8 GHz  
Max. available gain Gma = 16dB at 1.8 GHz  
Hermetically sealed microwave package  
Transition Frequency fT = 20 GHz  
SIEGET 25-Line  
Infineon Technologies Grounded Emitter Transistor-  
25 GHz f -Line  
T
Product validation  
Space Qualified  
ESCC Detail Spec. No.: 5611/008  
Type Variant No. 03  
Description  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Table 1  
Type  
Product information  
Comment  
Pin Configuration  
Package  
1
2
3
4
BFY450(ES)  
BFY450(P)1  
For flight use  
Not for flight use1  
C
E
B
E
Micro-X  
1 (P) parts have the same fit, form and function as (ES) parts,  
no screening acc. to Chart F3 in ESCC Generic Specification No. 5010  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
1 of 6  
IFAG PSS RFS D2 HIR  
Issue 5, January 2022  
 
 
 

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