生命周期: | Active | 包装说明: | DISK BUTTON, O-CRDB-F4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.11 |
Is Samacsys: | N | 外壳连接: | EMITTER |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.9 pF |
集电极-发射极最大电压: | 4.5 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | 最高频带: | L BAND |
JESD-30 代码: | O-CRDB-F4 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 22000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFY450S | INFINEON |
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HiRel NPN Silicon RF Transistor | |
BFY46 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-5 | |
BFY50 | NXP |
获取价格 |
NPN medium power transistors | |
BFY50 | STMICROELECTRONICS |
获取价格 |
MEDIUM POWER AMPLIFIER | |
BFY50 | SEME-LAB |
获取价格 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR | |
BFY50 | CENTRAL |
获取价格 |
Small Signal Transistors | |
BFY50 | NJSEMI |
获取价格 |
Trans GP BJT NPN 35V 3-Pin TO-39 | |
BFY50_02 | SEME-LAB |
获取价格 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR | |
BFY50D | ZETEX |
获取价格 |
TRANSISTOR,BJT,NPN,35V V(BR)CEO,CHIP / DIE | |
BFY50DWP | ZETEX |
获取价格 |
Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH |