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BFN36TC PDF预览

BFN36TC

更新时间: 2024-11-16 20:11:19
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
1页 41K
描述
Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

BFN36TC 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.24
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzBase Number Matches:1

BFN36TC 数据手册

  

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