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BFN38E6327HTSA1 PDF预览

BFN38E6327HTSA1

更新时间: 2024-11-17 03:55:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 517K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-223, 4 PIN

BFN38E6327HTSA1 数据手册

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BFN38  
NPN Silicon High-Voltage Transistors  
Suitable for video output stages TV sets  
4
3
and switching power supplies  
2
1
High breakdown voltage  
Low collector-emitter saturation voltage  
Complementary type: BFN39 (PNP)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
BFN38  
Marking  
BFN38  
Pin Configuration  
Package  
SOT223  
1=B 2=C 3=E 4=C  
-
-
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Peak collector current, t 10 ms  
Base current  
Peak base current  
Total power dissipation-  
Symbol  
Value  
300  
300  
6
200  
500  
100  
200  
1.5  
Unit  
V
V
V
V
CEO  
CBO  
EBO  
mA  
I
C
I
p
CM  
I
B
I
BM  
W
P
tot  
T 124 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
17  
Unit  
K/W  
1)  
R
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
1
2011-07-25  

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