Datasheet > BFN38E6327HTSA1

BFN38E6327HTSA1

更新时间： 2024-11-17 03:55:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	517K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-223, 4 PIN

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BFN38E6327HTSA1 数据手册

BFN38

NPN Silicon High-Voltage Transistors

• Suitable for video output stages TV sets

and switching power supplies

• High breakdown voltage

• Low collector-emitter saturation voltage

• Complementary type: BFN39 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

BFN38

Marking

BFN38

Pin Configuration

Package

SOT223

1=B 2=C 3=E 4=C

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current, t ≤ 10 ms

Base current

Peak base current

Total power dissipation-

Symbol

Value

300

200

500

100

200

1.5

Unit

CEO

CBO

EBO

tot

T ≤ 124 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 17

Unit

K/W

thJS

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2011-07-25

12 3 4 5 6

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