Datasheet > BFN38-E6433

BFN38-E6433

更新时间： 2024-11-16 14:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	65K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BFN38-E6433 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.2 A	配置：	Single
最小直流电流增益 (hFE)：	25	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1.5 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

BFN38-E6433 数据手册

BFN38

NPN Silicon High-Voltage Transistors

• Suitable for video output stages TV sets

and switching power supplies

• High breakdown voltage

• Low collector-emitter saturation voltage

• Complementary type: BFN39 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

SOT223

BFN38

1=B 2=C 3=E 4=C

Maximum Ratings

Parameter

Symbol

Value

300

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CBO

EBO

200

500

100

200

1.5

Peak collector current

Base current

Peak base current

Total power dissipation-

tot

T ≤ 124 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 17

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-29

12 3 4 5 6

中文翻译

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