BFN22

更新时间： 2024-11-15 22:27:35

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
Surface mount Si-Epitaxial PlanarTransistors

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中文翻译

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技术参数
数据手册

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BFN22 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.59	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

BFN22 数据手册

BFN 22

NPN

High Voltage Transistors

Surface mount Si-Epitaxial PlanarTransistors

NPN

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

250 mW

Plastic case

SOT-23

Kunststoffgehäuse

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions / Maße in mm

1 = B 2 = E 3 = C

Maximum ratings (T_A= 25ꢀC)

Grenzwerte (T_A= 25ꢀC)

BFN 22

Collector-Emitter-voltage

Collector-Base-voltage

B open

E open

V_CE0

V_CB0

250 V

Collector-Emitter-voltage

Emitter-Base-voltage

Power dissipation – Verlustleistung

R_BE= 2.7 kꢀ V_CER

250 V

5 V

C open

V_EB0

P_tot

I_C

250 mW ¹)

50 mA

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom I_CM

100 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

150ꢀC

- 65…+ 150ꢀC

Characteristics (T_j= 25ꢀC)

Kennwerte (T_j= 25ꢀC)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I_E= 0, V_CB= 200 V

I_CB0

–

100 nA

20 ꢁA

I_E= 0, V_CB= 200 V, T_j= 150ꢀC

Emitter-Base cutoff current – Emitterreststrom

I_C= 0, V_EB= 5 V

I_EB0

–

100 nA

500 mV

Collector saturation volt. – Kollektor-Sättigungsspg. ²)

I_C= 10 mA, I_B= 1 mA

V_CEsat

)

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluß

Tested with pulses t_p= 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen t_p= 300 ꢀs, Schaltverhältnis ꢀ 2%

01.11.2003

中文翻译

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