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BFN36TC

更新时间: 2024-11-16 13:05:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管开关光电二极管高压局域网
页数 文件大小 规格书
1页 45K
描述
Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

BFN36TC 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.24
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):70 MHz
VCEsat-Max:0.4 VBase Number Matches:1

BFN36TC 数据手册

  
SOT223 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
BFN36  
ISSUE 4 - JANUARY 1996  
FEATURES:  
C
*
High VCEO and Low saturation voltage  
APPLICATIONS:  
*
*
Suitable for video output stages in TV sets  
Switching power supplies  
E
C
COMPLEMENTARY TYPE - BFN37  
PARTMARKING DETAILS - BFN36  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
250  
Collector-Emitter Voltage  
250  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
500  
2
mA  
W
Ptot  
Tj:Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN.  
250  
TYP.  
MAX.  
UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
250  
5
IC=1mA  
Emitter-Base  
Breakdown Voltage  
IE=100µA  
Collector Cut-Off  
Current  
100 nA  
20  
VCB=200V  
VCB=200V, Tamb=150°C  
µA  
100 nA  
Emitter Cut-Off  
Current  
IEBO  
VEB=4V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
0.4  
0.9  
V
V
IC=20mA, IB=2mA  
IC=20mA, IB=2mA  
Base-Emitter  
Saturation Voltage  
Static Forward Current hFE  
Transfer Ratio  
25  
40  
40  
IC=1mA, VCE=10V*  
IC=10mA, VCE=10V*  
IC=30mA, VCE=10V*  
Transition  
Frequency  
fT  
70  
MHz  
pF  
IC=20mA, VCE=10V  
f=100MHz  
Output Capacitance  
Cobo  
1.5  
VCB=30V,f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMTA42 datasheet.  
3 - 46  

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