Datasheet > BFG67_08

BFG67_08

更新时间： 2024-01-24 20:20:39

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	104K
描述
Silicon NPN Planar RF Transistor

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中文翻译

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BFG67_08 数据手册

Not for new design, this product will be obsoleted soon

BFG67

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• Small feedback capacitance

• Low noise figure

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Electrostatic sensitive device.

Observe precautions for handling.

19217

Applications

Mechanical Data

Low noise small signal amplifiers up to 2 GHz. This Case: SOT-143 Plastic case

transistor has superior noise figure and associated

gain performance at UHF, VHF and microwave fre-

quencies.

Weight: approx. 8.0 mg

Marking: V3

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

2.5

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

200

150

T_stg

- 65 to +150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 μm Cu

Electrical DC Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

I_CES

I_CBO

Min

Typ.

Max

100

Unit

Collector-emitter cut-off current V_CE= 20 V, V_BE= 0

μA

Collector-base cut-off current

Emitter-base cut-off current

_CB= 15 V, I_E= 0

_EB= 1 V, I_C= 0

100

μA

I_EBO

Collector-emitter breakdown

voltage

_C= 1 mA, I_B= 0

V_(BR)CEO

Collector-emitter saturation

voltage

I_C= 50 mA, I_B= 5 mA

V_CEsat

h_FE

0.1

0.4

DC forward current transfer ratio V_CE= 5 V, I_C= 15 mA

100

150

Document Number 85074

Rev. 1.3, 08-Sep-08

www.vishay.com

12 3 4

中文翻译

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